MRF6V2010N中文资料10-450 MHz，10 W，50 V宽带射频功率LDMOS数据手册恩XP规格书

描述 Description

The MRF6V2010N, MRF6V2010GN and MRF6V2010NB are designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.

特性 Features

• Typical CW performance at 220 MHz: VDD = 50 Vdc, IDQ = 30 mA, Pout = 10 WPower gain: 23.9 dBDrain efficiency: 62%
• Capable of handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 W CW output power
• Characterized with series equivalent large-signal impedance parameters
• Qualified Up to a maximum of 50 VDD operation
• Integrated ESD protection
• 225°C capable plastic package
• RoHS compliant