RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impr

文件：171.23 Kbytes 页数：5 Pages

MICROSEMI

美高森美

NPN SILICON RF TRANSISTOR

DESCRIPTION: The ASI MRF555 is designed for Wideband large signal stages in the UHF frequency range. FEATURES: • 12.5 V, 470 MHz. • POUT = 1.5 W • GP = 11 min. • η = 60 (Typ)

文件：68.18 Kbytes 页数：3 Pages

ASI

RF LOW POWER TRANSISTOR NPN SILICON

The RF Line NPN Silicon RF Low Power Transistor Designed primarily for wideband large signal predriver stages in the UHF frequency range. • Specified @ 12.5 V, 470 MHz Characteristics @ Pout = 1.5 W Common Emitter Power Gain = 12.5 dB (Typ) Efficiency 60 (Typ) • Cost Effective PowerMac

文件：99.07 Kbytes 页数：6 Pages

MOTOROLA

摩托罗拉

RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS

DESCRIPTION: Designed primarily for wideband large signal stages in the UHF frequency range. Features • Specified @ 12.5 V, 470 MHz Characteristics • Output Power = 1.5 W • Minimum Gain = 11 dB • Efficiency 60 (Typ) • Cost Effective PowerMacro Package • Electroless Tin Plated Leads for Impr

文件：68.72 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

Package：超大功率；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 16V POWER MACRO

MICROSEMI

美高森美

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

RF/Microwave Si BJT Power Devices & Pallets

Microchip

微芯科技

包装：带 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 16V 470MHZ

MICROSEMI

美高森美

Package：超大功率；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 16V POWER MACRO

MICROSEMI

美高森美