1500W RF Power Transistor Sets New Benchmark

文件：3.70639 Mbytes 页数：2 Pages

恩XP

1500W RF Power Transistor Sets New Benchmark

文件：3.70639 Mbytes 页数：2 Pages

恩XP

1.8-500 MHz，1500 W连续波，50 V LDMOS宽带射频功率晶体管

This high ruggedness device, MRF1K50H, is designed for use in high VSWR industrial, scientific and medical applications, as well as radio and VHF TV broadcast, sub-GHz aerospace and mobile radio applications. Its unmatched input and output design allows for wide frequency range use from 1.8 to 500 M • High Drain-source Avalanche Energy Absorption Capability\n• Unmatched Input and Output\n• Device Can Be Used Single-Ended or in a Push-Pull Configuration\n• Characterized from 30 to 50 V\n• High Rugggedness. Handles 65:1 VSWR.\n• This product is included in our product longevity program with assur;

恩XP

Surge Capable Thick Film Non Inductive

文件：106.02 Kbytes 页数：1 Pages

OHMITE

Ideal to replace standard carbon com-position resistors

文件：357.25 Kbytes 页数：2 Pages

OHMITE