Fast Acting Radial Lead Micro Fuse Series

Fast Acting Radial Lead Micro Fuse Series

文件：102.1 Kbytes 页数：2 Pages

BEL

TYPE MRF FAST ACTING RADIAL LEAD MICRO FUSE SERIES

文件：1.37879 Mbytes 页数：4 Pages

BEL

RF POWER TRANSISTOR

文件：111.05 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

RF POWER BROADBAND NPN BIPOLAR

文件：109.9 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

RF POWER BROADBAND NPN BIPOLAR

文件：109.9 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

2.0 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20030R is designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier applications. Suitable for frequency modulated, ampl \n•Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics\nOutput Power — 30 Watts (PEP)\nPower Gain — 9.8 dB\n Efficiency — 34%\n Intermodulation Distortion —   –28 dBc\n•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics\n Output Power — 30 Watts\n Power Gain — 11 dB\n Efficien;

恩XP

2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20060R is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of this device makes it ideal for large–signal, common emitter class AB amplifier applications. This dev \n•Guaranteed Two–tone Performance at 2000 MHz, 26 Volts\n Output Power — 60 Watts (PEP)\n\tPower Gain — 9.8 dB\n\tEfficiency — 33%\n\tIntermodulation Distortion —\n\t  –32 dBc\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Le;

恩XP

2.0 GHz, 60 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20060RS is designed for class AB broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain, excellent linearity and broadband performance of this device makes it ideal for large–signal, common emitter class AB amplifier applications. This de \n•Guaranteed Two–tone Performance at 2000 MHz, 26 Volts\n Output Power — 60 Watts (PEP)\n\tPower Gain — 9.8 dB\n\tEfficiency — 33%\n\tIntermodulation Distortion —\n\t  –32 dBc\n•Characterized with Series Equivalent Large–Signal Impedance Parameters\n•S–Parameter Characterization at High Bias Le;

恩XP