MRF20030R中文资料2.0 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor数据手册恩XP规格书

描述 Description

Overview The MRF20030R is designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier applications. Suitable for frequency modulated, amplitude modulated and multi–carrier base station RF power amplifiers.MRF20030R removed from active portfolio. Possible Replacement Part: MRF19030R3.

特性 Features

•Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics
Output Power — 30 Watts (PEP)
Power Gain — 9.8 dB
Efficiency — 34%
Intermodulation Distortion —   –28 dBc
•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics
Output Power — 30 Watts
Power Gain — 11 dB
Efficiency — 40%
Intermodulation Distortion —   –30 dBc
•Excellent Thermal Stability
•Capable of Handling 3:1 VSWR @ 26 Vdc, 2000 MHz,
30 Watts (PEP) Output Power
•Characterized with Series Equivalent Large–Signal
Impedance Parameters
•S–Parameter Characterization at High Bias Levels
•Designed for FM, TDMA, CDMA, and Multi–Carrier
Applications

Note:  Not Suitable for Class A Operation.