RF POWER TRANSISTOR

文件：111.05 Kbytes 页数：10 Pages

MOTOROLA

摩托罗拉

RF POWER TRANSISTOR

恩XP

2.0 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor

Overview The MRF20030R is designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high gain and broadband performance of this device makes it ideal for large–signal, common–emitter class AB amplifier applications. Suitable for frequency modulated, ampl \n•Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics\nOutput Power — 30 Watts (PEP)\nPower Gain — 9.8 dB\n Efficiency — 34%\n Intermodulation Distortion —   –28 dBc\n•Typical 26 Volts, 1.88 GHz, Class AB, CW Characteristics\n Output Power — 30 Watts\n Power Gain — 11 dB\n Efficien;

恩XP

Military Standard Connector Index

文件：59.6 Kbytes 页数：1 Pages

GLENAIR

MAGNETIC PROXIMITY SENSOR

文件：384.25 Kbytes 页数：2 Pages

CELDUC

凡纪继电器

200 V, 3 A hyperfast recovery rectifier

1. General description High power density, hyperfast recovery rectifier with high-efficiency planar technology, encapsulated in a small and flat lead CFP5 (SOD128) Surface-Mounted Device (SMD) plastic package. 2. Features and benefits • Reverse voltage VR ≤ 200 V • Forward current IF ≤ 3 A

文件：241.63 Kbytes 页数：12 Pages

NEXPERIA

安世