RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The ASI MRF141G is a Dual Common Source N-Channel Enhancement-Mode MOSFET RF Power Transistor, Designed for 175 MHz, 300 W Transmitter and Amplifier Applications.

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ASI

RF Power FET 300W, 175MHz, 28V

RF Power FET 300W, 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. • G

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MA-COM

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Pow

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Motorola

摩托罗拉

RF Power Field-Effect Transistor

The RF MOSFETLine RF Power Field-Effect Transistor N-ChannelEnhancement-Mode Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175 MHz. • Superior High Order IMD • Specified 50 Volts, 30 MHz Characteristics Output Power = 30 Watts Power

文件：95.99 Kbytes 页数：2 Pages

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-Channel Enhancement Mode VHF POWER MOSFET

DESCRIPTION: The ASI MRF148A is Designed for General Purpose Class B Power Amplifier Applications up to 175 MHz. FEATURES: • PG = 15 dB Typ. at 30 W /175 MHz • ηD = 50 Typ. at 30 W /30 MHz • Omnigold™ Metalization System

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ASI

Designed for power amplifier applications in industrial

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (SOW PEP): -35 dB (Typ.) IMD(d11) (30W PEP): -60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: SOW Gain: 18dB (Typ.)

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NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

Linear RF Power FET 30W, to 175MHz, 50V

Designed for power amplifier applications in industrial, commercial and amateur radio equipment to 175MHz. • Superior high order IMD IMD(d3) (30W PEP): –35 dB (Typ.) IMD(d11) (30W PEP): –60 dB (Typ.) • Specified 50V, 30MHz characteristics: Output power: 30W Gain: 18dB (Typ.)

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MA-COM

The RF MOSFET Line 150W, to 150MHz, 28V

文件：331.02 Kbytes 页数：10 Pages

MA-COM

MRF140_15

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MA-COM