RF Power MOSFET 150W, to 175MHz, 28V

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. ·Guaranteed performance at 30 MHz, 28V: Output Power: 150W Gain: 8dB (22dB Typ.) Efficiency: 40%\n·Typical Performance at 175MHz, 50V: Output Power: 150 W Gain: 13 dB\n·Low Thermal Resistance\n·Nitride Passivated Die for Enhanced Reliability\n·Ruggedness Tested at Rated Output Power;

MACOM

TMOS

Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers. ·Guaranteed Performance at 175MHz, 28V: - Output power: 300W, Gain: 12dB (14dB Typ.), Efficiency: 50%\n·Nitride PassivatedDie for Enhanced Reliability\n·Ruggedness Tested at Rated Output Power\n·Low Thermal Resistance: 0.35°C/W;

MACOM

N-CHANNEL BROADBAND RF POWER MOSFET

恩XP

Package：375-04；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - FET，MOSFET - 射频 描述：FET RF 2CH 65V 175MHZ 375-04

MACOM Technology Solutions

包装：散装 类别：连接器，互连器件 矩形连接器外壳 描述：CONN JACK HSG 4POS

Hirose Electric Co Ltd

包装：散装 类别：连接器，互连器件 矩形连接器外壳 描述：CONN PLUG HSG 4POS COAX

Hirose Electric Co Ltd