MRF14 Series Non-magnetic, High Durability Connector

文件：168.3 Kbytes 页数：1 Pages

HIROSEHirose Electric Company

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N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

文件：163.87 Kbytes 页数：6 Pages

Motorola

摩托罗拉

N-CHANNEL MOS LINEAR RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed primarily for linear large–signal output stages up to 150 MHz frequency range. • Specified 28 Volts, 30 MHz Characteristics Output Power = 150 Watts Power Gain = 15 dB (Typ) Efficiency = 40 (Typ

文件：204.27 Kbytes 页数：8 Pages

MACOM

The RF MOSFET Line 150W, to 150MHz, 28V

Designed primarily for linear large–signal output stages up to 150 MHz frequency range. N–Channel enhancement mode • Specified 28 volts, 30 MHz characteristics Output power = 150 watts Power gain = 15 dB (Typ.) Efficiency = 40 (Typ.) • Superior high order IMD • IMD(d3) (150 W PEP):

文件：331.02 Kbytes 页数：10 Pages

MA-COM

RF FIELD-EFFECT POWER TRANSISTOR

DESCRIPTION: The MRF141 is a N-Channel Enhancement-Mode MOSFET RF Power Transistor Designed for 175 MHz 150 W Transmitter and Amplifier Applications.

文件：50 Kbytes 页数：4 Pages

ASI

RF Power FET 150W, to 175MHz, 28V

RF Power FET 150W, to 175MHz, 28V Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device is especially useful for FM broadcast or TV channel frequency band solid state transmitters and amplifiers.

文件：337.87 Kbytes 页数：11 Pages

MA-COM

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：205.5 Kbytes 页数：10 Pages

MACOM

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：160.63 Kbytes 页数：8 Pages

Motorola

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：143.32 Kbytes 页数：6 Pages

Motorola

摩托罗拉

N-CHANNEL BROADBAND RF POWER MOSFET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this device makes possible solid state transmitters for FM broadcas

文件：220.57 Kbytes 页数：9 Pages

MACOM