| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
50V;3ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V;3ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinasmallSOT23(TO-236AB)Surface-MountedDevice(SMD)plastic package. PNPcomplement:PBSS5350T-Q 2.Featuresandbenefits •Lowcollector-emittersaturationvoltageVCEsatandcorrespondinglowRCEsat •Highcollectorcurrentcapability | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
50V,3ANPNlowVCEsattransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT89plasticpackage. PNPcomplement:PBSS5350X 2.Featuresandbenefits •SOT89(SC-62)package •Lowcollector-emittersaturationvoltageVCEsat •Highcollectorcurrentcapability:ICandICM •Higherefficiencyleadingtolesshea | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
SiliconNPNtransistorinaSOT-89PlasticPackage | FOSHANFoshan Blue Rocket Electronics Co.,Ltd. 蓝箭电子佛山市蓝箭电子股份有限公司 | FOSHAN | ||
LowVCEsat(BISS)transistors | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
LowVCEsat(BISS)transistors | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor DESCRIPTION NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. FEATURES •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyleadingtolessheatgeneration | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
50VlowVCEsatNPNtransistor | PhilipsROYAL PHILIPS 飞利浦荷兰皇家飞利浦 | Philips | ||
50VlowVCEsatNPNtransistor 1.Generaldescription NPNlowVCEsattransistorinaSOT223plasticpackage.PNPcomplement:PBSS5350Z. 2.Featuresandbenefits •Lowcollector-emittersaturationvoltage •Highcollectorcurrentcapability:ICandICM •Highcollectorcurrentgain(hFE)athighIC •Higherefficiencyl | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | NEXPERIA | ||
MHVMaleConnectorCrimp-SolderAttachmentForRG214,RG9 | PASTERNACKPasternack Enterprises, Inc. 帕斯特纳克 | PASTERNACK | ||
MHVMaleConnectorCrimp/SolderAttachment | PASTERNACKPasternack Enterprises, Inc. 帕斯特纳克 | PASTERNACK | ||
MSDPowersportsLaunchMaster | MALLORYMallory Sonalert Products Inc. 马洛里马洛里MALLORY | MALLORY | ||
ICsforCommunications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
ICsforCommunications | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
SiliconPowerRectifier SiliconPowerRectifier •Softrecovery •GlassPassivatedDie •2500AmpsSurgeRating •Glasstometalsealconstruction •VRRMto1600V | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
RFPowerFieldEffectTransistor 865--960MHz,28WAVG.,28VSINGLEW--CDMALATERALN--CHANNELRFPOWERMOSFET DesignedforCDMAbasestationapplicationswithfrequenciesfrom865to960MHz.CanbeusedinClassABandClassCforalltypicalcellularbasestationmodulationformats. •TypicalSingle--CarrierW--CDMAPerfor | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
RFPowerLDMOSTransistor N--ChannelEnhancement--ModeLateralMOSFET This50wattRFpowerLDMOStransistorisdesignedforcellularbasestation applicationscoveringthefrequencyrangeof1805to1880MHz. TypicalSingle--CarrierW--CDMAPerformance:VDD=28Volts, IDQ=1800mA,Pout=50WattsAvg.,InputSign | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFPowerLDMOSTransistor N--ChannelEnhancement--ModeLateralMOSFET This63wattasymmetricalDohertyRFpowerLDMOStransistorisdesigned forcellularbasestationapplicationsrequiringverywideinstantaneous bandwidthcapabilitycoveringthefrequencyrangeof1805to1880MHz. TypicalDohertySingle--Carrier | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
RFLDMOSWidebandIntegratedPowerAmplifiers | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON |
1738+ |
TO-3P |
8529 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
ISC |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
ON/安森美 |
23+ |
TO-3P |
10000 |
公司只做原装正品 |
询价 | ||
ON/安森美 |
TO-3P |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
ON/安森美 |
TO-3P |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
ON/安森美 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON/安森美 |
22+ |
TO-3P |
96315 |
终端免费提供样品 可开13%增值税发票 |
询价 | ||
ON/安森美 |
22+ |
TO-3P |
96315 |
询价 | |||
ON/安森美 |
22+ |
TO-3P |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
ON |
24+ |
TO-3P |
12300 |
独立分销商,公司只做原装,诚心经营,免费试样正品保证 |
询价 |
相关规格书
更多- MJE521
- MK1110
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