Plastic Medium?뭁ower NPN Silicon Transistor

These devices are designed for use in general−purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. Features • DC Current Gain − hFE = 40 (Min) @ IC = 1.0 Adc • Co

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ONSEMI

安森美半导体

SILICON COMPLEMENTRY POWER TRANSISTOR

DESCRIPTION The CENTRAL SEMICONDUCTOR MJE371, MJE521 types are Complementary Silicon Power Transistors designed for use in general amplifier and switching applications.

文件：70.19 Kbytes 页数：1 Pages

Central

4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

Plastic Medium-Power NPN Silicon Transistor . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry circuitry. • DC Current Gain — hFE = 40 (Min) @ IC = 1.0 Adc • Complementary to

文件：128.78 Kbytes 页数：4 Pages

Motorola

摩托罗拉

isc Silicon NPN Power Transistor

DESCRIPTION • Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min) • DC Current Gain- : hFE = 40(Min) @ IC= 1A • Complement to Type MJE371 APPLICATIONS • Designed for use in general−purpose amplifier and switching circuits applications.

文件：142.94 Kbytes 页数：2 Pages

ISC

无锡固电

SILICON NPN TRANSISTOR

DESCRIPTION The MJE521 is a silicon Epitaxial-Base NPN transistor in Jedec SOT-32 plastic package. It is intended for use in 5 to 20W audio amplifiers, general purpose amplifier and switching circuits. ■ STMicroelectronics PREFERRED SALESTYPE

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STMICROELECTRONICS

意法半导体

SILICON NPN TRANSISTOR

文件：45.84 Kbytes 页数：4 Pages

STMICROELECTRONICS

意法半导体

4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS

恩XP

Trans GP BJT NPN 40V 4A 3-Pin TO-225 Bulk

NJS

Through-Hole Transistor-Bipolar Power (>1A) NPN General Purpose Amplifier/Switch

Central

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 40V 4A TO126

ONSEMI

安森美半导体