GaN Doherty Hybrid Amplifier

Description Accommodating the future of 4G/LTE small cells, RFHIC introduces RTH23007-10 amplifier fabricated using an advanced high power density Gallium Nitride (GaN) semiconductor process. This high performance amplifier achieves high efficiency of 45, and powers 7W over the frequency range

文件：295.24 Kbytes 页数：7 Pages

RFHIC

RF Power LDMOS Transistor

N--Channel Enhancement--Mode Lateral MOSFET This 63 watt asymmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous bandwidth capability covering the frequency range of 1805 to 1880 MHz.  Typical Doherty Single--Carrier

文件：474.4 Kbytes 页数：16 Pages

恩XP

GaN Hybrid Power Amplifier

文件：1.28273 Mbytes 页数：8 Pages

HONGFA

宏发电声

GaN Doherty Hybrid Amplifier

文件：586.38 Kbytes 页数：6 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：586.39 Kbytes 页数：6 Pages

RFHIC

GaN Doherty Hybrid Amplifier

文件：581.27 Kbytes 页数：6 Pages

RFHIC

RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs

文件：868.17 Kbytes 页数：13 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：985.86 Kbytes 页数：21 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors

文件：437.43 Kbytes 页数：15 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体

RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs

文件：1.27025 Mbytes 页数：20 Pages

FREESCALEFreescale Semiconductor, Inc

飞思卡尔飞思卡尔半导体