NPN Silicon High?뭋oltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

文件：60.35 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

NPN Silicon High-Voltage Power Transistor

NPN Silicon High−Voltage Power Transistor This device is designed for use in line−operated equipment requiring high fT. Features • High DC Current Gain − hFE = 40−160 @ IC = 20 mAdc • Current Gain Bandwidth Product − fT = 15 MHz (Min) @ IC

文件：82.31 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 350V 0.3A TO126

ONSEMI

安森美半导体

Lithium-Ion Battery Charge Control IC

文件：161.34 Kbytes 页数：27 Pages

MITSUMI

三美

SOT-363 Plastic-Encapsulate MOSFETs

FEATURE Surface Mount Package Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected Gate Including a N-ch CJ3134K and a P-ch CJ3139K independently) In a Package

文件：2.35792 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

60V P-Channel Enhancement Mode MOSFET

文件：278.72 Kbytes 页数：6 Pages

PANJIT

強茂