丝印：49K；Package：SOT-363；SOT-363 Plastic-Encapsulate MOSFETs

FEATURE Surface Mount Package Low RDS(on) Operated at Low Logic Level Gate Drive ESD Protected Gate Including a N-ch CJ3134K and a P-ch CJ3139K independently) In a Package

文件：2.35792 Mbytes 页数：6 Pages

DGNJDZ

南晶电子

60V P-Channel Enhancement Mode MOSFET

文件：278.72 Kbytes 页数：6 Pages

PANJIT

強茂

60V P-Channel Enhancement Mode MOSFET

Features  RDS(ON), VGS@-10V, ID@-500mA

文件：295.63 Kbytes 页数：6 Pages

PANJIT

強茂

NPN high-voltage transistors

DESCRIPTION NPN high-voltage transistor in a TO-92; SOT54 plastic package. FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • Telephony and professional communication equipment.

文件：49.46 Kbytes 页数：8 Pages

PHI

PHI