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MJE350G

Plastic Medium Power PNP Silicon Transistor

Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 300 Vdc @ IC = 1.0 mAd

文件:139.29 Kbytes 页数:3 Pages

ONSEMI

安森美半导体

MJE350G

Plastic Medium-Power PNP Silicon Transistor

Plastic Medium Power PNP Silicon Transistor This device is designed for use in line−operated applications such as low power, line−operated series pass and switching regulators requiring PNP capability. Features • High Collector−Emitter Sustaining Voltage − VCEO(sus) = 300 Vdc @ IC = 1.0 mAd

文件:102.95 Kbytes 页数:3 Pages

ONSEMI

安森美半导体

MJE350G

Package:TO-225AA,TO-126-3;包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 300V 0.5A TO126

ONSEMI

安森美半导体

MJS350

Lightning Surge Withstand Fuse

文件:89.01 Kbytes 页数:2 Pages

BEL

MJS350-R

TYPE MJS LIGHTNING SURGE WITHSTAND FUSE

文件:1.44605 Mbytes 页数:4 Pages

BEL

ML350RAT

High-Reliability Air Core Inductors

文件:502.98 Kbytes 页数:2 Pages

COILCRAFT

产品属性

  • 产品编号:

    MJE350G

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    PNP

  • 电流 - 集电极截止(最大值):

    100µA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    30 @ 50mA,10V

  • 工作温度:

    -65°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-225AA,TO-126-3

  • 供应商器件封装:

    TO-126

  • 描述:

    TRANS PNP 300V 0.5A TO126

供应商型号品牌批号封装库存备注价格
ON/安森美
24+
TO-225-3
32350
深圳存库原装现货
询价
ON
23+
N/A
10000
正规渠道,只有原装!
询价
ON/安森美
24+
TO-225
10000
只做原装欢迎含税交易,假一赔十,放心购买
询价
ONSEMI/安森美
25+
TO-220
45000
ONSEMI/安森美全新现货MJE350G即刻询购立享优惠#长期有排单订
询价
ON
16+/17+
TO-225
78000
渠道现货库存-原装正品
询价
ON
23+
TO-225
56000
询价
ON/安森美
22+
TO-126
10000
原装正品
询价
ON
24+
TO-225
21935
询价
ON-SEMI
2021+
TO-126
6800
原厂原装,欢迎咨询
询价
ON(安森美)
23+
TO-225
10293
公司只做原装正品,假一赔十
询价
更多MJE350G供应商 更新时间2026-1-29 14:28:00