Complementary Silicon Power Plastic Transistors

These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Co

文件：170.29 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Plastic Transistors

文件：120.99 Kbytes 页数：6 Pages

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：托盘 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 40V 5A TO126

ONSEMI

安森美半导体

N-Channel RF Amplifier

N-Channel RF Amplifier This device is designed for HF/VHF mixer/amplifier and applications where Process 50 is not adequate. Sufficient gain and low noise for sensitive receivers. Sourced from Process 90.

文件：199.31 Kbytes 页数：5 Pages

FAIRCHILD

仙童半导体

Lightning Surge Protectors for Electronics Equipment M-RESTER

文件：101.92 Kbytes 页数：4 Pages

MSYSTEM

爱模

Moisture Meter

文件：96.94 Kbytes 页数：4 Pages

EXTECH