2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

文件：58.89 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors . . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC). • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A — TO–126 • Collector–Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC

文件：109.68 Kbytes 页数：4 Pages

MOTOROLA

摩托罗拉

NPN PLASTIC POWER TRANSISTOR

MJE270 NPN PLASTIC POWER TRANSISTOR MJE271 PNP PLASTIC POWER TRANSISTOR Medium Power Darlingtons for Linear and Switching Applications

文件：57.67 Kbytes 页数：2 Pages

TEL

PLASTIC POWER TRANSISTOR

文件：526.1 Kbytes 页数：3 Pages

CDIL

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS 15 WATTS

Complementary Silicon Power Transistors. . . designed specifically for use with the MC3419 Solid–State Subscriber Loop Interface Circuit (SLIC).• High Safe Operating Area\n   IS/B @ 40 V, 1.0 s = 0.375 A — TO–126\n• Collector–Emitter Sustaining Voltage\n   VCEO(sus) = 100 Vdc (Min)\n• High DC Curren

恩XP

NPN PLASTIC POWER TRANSISTOR

TRANSYS

PLASTIC POWER TRANSISTOR

CDIL

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 2A TO126

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant*

文件：89.85 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

文件：179.59 Kbytes 页数：4 Pages

ONSEMI

安森美半导体