2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • Pb−Free Packages are Available*

文件：58.89 Kbytes 页数：3 Pages

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安森美半导体

Complementary Silicon Power Transistors

Complementary Silicon Power Transistors Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant*

文件：89.85 Kbytes 页数：3 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

文件：179.59 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Complementary Silicon Power Transistors

Features • High Safe Operating Area IS/B @ 40 V, 1.0 s = 0.375 A • Collector−Emitter Sustaining Voltage VCEO(sus) = 100 Vdc (Min) • High DC Current Gain hFE @ 120 mA, 10 V = 1500 (Min) • These Devices are Pb−Free and are RoHS Compliant

文件：179.59 Kbytes 页数：4 Pages

ONSEMI

安森美半导体

Package：TO-225AA，TO-126-3；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN DARL 100V 2A TO126

ONSEMI

安森美半导体