MJE271G

2.0 AMPERE COMPLEMENTARY POWER DARLINGTON TRANSISTORS 100 VOLTS, 15 WATTS

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •Pb−FreePackagesareAvailable*

MJE271G

Complementary Silicon Power Transistors

ComplementarySiliconPowerTransistors Features •HighSafeOperatingArea IS/B@40V,1.0s=0.375A •Collector−EmitterSustainingVoltage VCEO(sus)=100Vdc(Min) •HighDCCurrentGain hFE@120mA,10V=1500(Min) •TheseDevicesarePb−FreeandareRoHSCompliant*

MJE271G

包装：托盘 封装/外壳：TO-225AA，TO-126-3 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP DARL 100V 2A TO126

271

SHIELDEDSMTPOWERINDUCTORS

●FEATURE VarioushighpowerinductorareSuperior tobehighsaturationforsurfacemounting ●APPLICATIONS 2DC/DCconverterpowersupply, Telecommunicationequipment

271

POWERINDUCTOR

●FEATURE 1.Excellentsolderheatresistance(add“C”isforhighcurrenttype) 2.Lowvoltagedropsandsmallvariationsinductance ●APPLICATION 1.DCpowersupplycircuits 2.Powerlinechokecoils…etc

271

WIREWOUNDSMDINDUCTOR

●FEATURE 1.Lowcorelossforhighfrequencypowerapplication 2.Largeterminalsurface ●APPLICATION 1.Portablecommunicationequipment,notebookcomputer

271

RectangularCase,High-CurrentandHigh-VoltageCircuits

Types271,272,273aredesignedforfrequenciesrangingfrom100kHzto3MHzandare wellsuitedforhigh-currentandhigh-voltageradiotransmittercircuitapplications.Cast inrectangularcases,thesecapacitorsareelectricallyequivalenttoMIL-C-5StylesCM65 throughCM73incapacitance

271JE

CarbonCompositionMoldedOD/OFSeries(5Tol.)OASeries(10)

271-SERIES

271SeriesHighSpeedCardEdgeConnectors|SASConnector1.27mmSignalPitch0.80mmSCSIPitch|68Pin|Plug

Features Datarate:16Gbps Numberofcontacts:29and68 AvailableinRightAngleSMT,VerticalSMT,andVerticalPress-fit Availableinreceptacleandplugtype SAS3.0andPCIe3.0Compliant Application:Server,Datastorage,Switch

271X

HighVoltage(Plate)&Filament-32VAto454VA

Features Primary115VAC,60Hz.-exceptasnoted Foruniversalprimariesand/or50/60Hz.operationandotheroutputvoltagecombinationspleaseseeour300Series Enclosed,4hole,chassismount. Minimum6longleads. UnitscanberunfullwavebridgeorfullwaveC.T. ClassAinsulation(

AC271

TO-8CASCADABLEAMPLIFIERS

BL-BEG271

DUAL-CHIPLEDLAMPS

BL-BEG271

LEDHi-EffRedandGreenLowcurrentrequirement.

BL-BHG271

LEDLAMPSSPECIFICATION

BL-BHG271

DUAL-CHIPLEDLAMPS

BL-BYG271

DUAL-CHIPLEDLAMPS

BL-BYG271

LEDGaAsP/GaPyellowandgreenLowcurrentrequirement.

BUZ271

SIPMOSPowerTransistor(PchannelEnhancementmodeAvalancherated)

SIPMOS®PowerTransistor •Pchannel •Enhancementmode •Avalancherated

BUZ271

iscP-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=-22A@TC=25℃ ·DrainSourceVoltage :VDSS=-50V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.15Ω(Max)@VGS=-10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordriv

C271C

PrecisionVoltageComparators

PrecisionVoltageComparators