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MJE3055TG

Complementary Silicon Plastic Power Transistors

10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS −75 WATTS MJE2955T (PNP) MJE3055T (NPN) These devices are designed for use in general−purpose amplifier and switching applications. Features • DC Current Gain Specified to 10 A • High Current Gain −Bandwidth Product −fT= 2.0 MHz (Min

文件:143.95 Kbytes 页数:4 Pages

ONSEMI

安森美半导体

MJE3055TG-TA3-T

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes 页数:3 Pages

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MJE3055TG-TA3-T

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes 页数:2 Pages

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MJE3055TG-TM3-T

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes 页数:3 Pages

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MJE3055TG-TM3-T

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes 页数:2 Pages

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MJE3055TG-TN3-R

HIGH VOLTAGE TRANSISTOR

文件:133.98 Kbytes 页数:3 Pages

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MJE3055TG-TN3-R

HIGH VOLTAGE TRANSISTOR

文件:119.69 Kbytes 页数:2 Pages

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MJE3055TG

Package:TO-220-3;包装:散装 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS NPN 60V 10A TO220

ONSEMI

安森美半导体

产品属性

  • 产品编号:

    MJE3055TG

  • 制造商:

    onsemi

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    散装

  • 晶体管类型:

    NPN

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    8V @ 3.3A,10A

  • 电流 - 集电极截止(最大值):

    700µA

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    20 @ 4A,4V

  • 频率 - 跃迁:

    2MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    通孔

  • 封装/外壳:

    TO-220-3

  • 供应商器件封装:

    TO-220

  • 描述:

    TRANS NPN 60V 10A TO220

供应商型号品牌批号封装库存备注价格
onsemi(安森美)
24+
TO-220
942
原厂订货渠道,支持BOM配单一站式服务
询价
ON
23+
TO220AB
56000
询价
ON/安森美
21+
TO-220-3
60000
绝对原装正品现货,假一罚十
询价
ST
1215+
TO-220
150000
全新原装,绝对正品,公司大量现货供应.
询价
ON
24+
TO-2203LEADSTANDA
8866
询价
ON/进口原
17+
TO-220
6200
询价
ON
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
三年内
1983
只做原装正品
询价
ON
20+
38500
全新现货热卖中欢迎查询
询价
ON
20+
SMD
11520
特价全新原装公司现货
询价
更多MJE3055TG供应商 更新时间2026-2-2 9:22:00