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MJE2801

POWER TRANSISTORS(10A,60V,75W)

...designedforuseasoutputdeviceincomplementaryaudioamplifiersupto30-Wattsmusicpowerperchannel FEATURES: •Collector-EmitterSustainingVoltage- VCEO(sus)=60V(Min) *DCCurrentGain- hFE=25-100@Ic=3.0A

MOSPEC

MOSPEC

MJE2801

HIGH-POWER NPN SILICON TRANSISTOR

HIGH-POWERNPNSILICONTRANSISTOR

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

MJE2801T

POWER TRANSISTORS(10A,60V,75W)

...designedforuseasoutputdeviceincomplementaryaudioamplifiersupto30-Wattsmusicpowerperchannel FEATURES: •Collector-EmitterSustainingVoltage- VCEO(sus)=60V(Min) *DCCurrentGain- hFE=25-100@Ic=3.0A

MOSPEC

MOSPEC

MJE2801T

isc Silicon NPN Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage- :V(BR)CEO=60V(Min) •HighDCCurrentGain- :hFE=25-100@IC=3A •ComplementtoTypeMJE2901T APPLICATIONS •Designedforuseasanoutputdeviceincomplementary audioamplifiersupto35wattsmusicpowerperchannel.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MJE2801T

COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS

...designedforuseasoutputdeviceincomplementaryaudioamplifiersupto30-Wattsmusicpowerperchannel FEATURES: •Collector-EmitterSustainingVoltage- VCEO(sus)=60V(Min) *DCCurrentGain- hFE=25-100@Ic=3.0A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体产品股份有限公司

2801

42MHzsurfacemountbandpassfilter

GeneralDescription KR2801isa42MHzsurfacemountbandpassfilter.Thefilterhasaminimum3dBbandwidthof4MHz.Otherpassbandfrequenciesareavailable.Pleaseconsultthefactory. Features •42MHzCenterFrequency •SurfaceMountPackage •50ΩSourceandLoad

KRKR Electronics, Inc.

KR Electronics, Inc.

2801P-R-ST

2801PRO5ChannelMultimodeCATVVSB/AMVideoLink

EMCORE

Emcore Corporation

2801P-R-ST

MultimodeCATVVSB/AM

EMCORE

Emcore Corporation

2801P-R-ST

MultimodeCATVTransport

EMCORE

Emcore Corporation

2801-SMA

42MHzCenterFrequency

KRKR Electronics, Inc.

KR Electronics, Inc.

AAT2801

Multi-ModeChargePumpforWhiteLEDBacklightandFlashApplications

ANALOGICTECHAdvanced Analogic Technologies

研诺科技研诺逻辑科技有限公司

ACT2801

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACT2801

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

ACT2801CQL-T

5V/1.5ABackupBatteryPackManager

ACTIVE-SEMI

Active-Semi International Inc.

AON2801

DualP-ChannelEnhancementModeFieldEffectTransistor

GeneralDescription TheAON2801/LusesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithgatevoltagesaslowas1.8V.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. AON2801andAON2801Lareelectricallyidentical. -RoHSCompli

AOSMDAlpha & Omega Semiconductors

万国半导体美国万国半导体

APM2801B

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

APM2801BC-TR

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

APM2801BC-TRL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

APM2801BC-TU

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

APM2801BC-TUL

P-ChannelEnhancementModeMOSFETwithSchottkyDiode

Features MOSFET ●-20V/-1.5A, RDS(ON)=145mW(typ.)@VGS=-4.5V RDS(ON)=180mW(typ.)@VGS=-2.5V ●SuperHighDenseCellDesign ●ReliableandRugged ●LeadFreeAvailable(RoHSCompliant) SBD ●LowForwardVoltage Applications ●PowerManagementinNotebookComputer, PortableE

ANPECAnpec Electronics Corp

茂达电子

晶体管资料

  • 型号:

    MJE2801

  • 别名:

    三极管、晶体管、晶体三极管

  • 生产厂家:

  • 制作材料:

    Si-NPN

  • 性质:

    低频或音频放大 (LF)_功率放大 (L)

  • 封装形式:

    直插封装

  • 极限工作电压:

    60V

  • 最大电流允许值:

    10A

  • 最大工作频率:

    <1MHZ或未知

  • 引脚数:

    3

  • 可代换的型号:

    BD207,BD213/60,BD607,3DD166B,

  • 最大耗散功率:

    90W

  • 放大倍数:

  • 图片代号:

    B-21

  • vtest:

    60

  • htest:

    999900

  • atest:

    10

  • wtest:

    90

详细参数

  • 型号:

    MJE2801

  • 制造商:

    MOSPEC

  • 制造商全称:

    Mospec Semiconductor

  • 功能描述:

    POWER TRANSISTORS(10A,60V,75W)

供应商型号品牌批号封装库存备注价格
ON
N/A
6000
询价
ON
1738+
TO-3P
8529
科恒伟业!只做原装正品,假一赔十!
询价
ON/安森美
23+
TO-3P
10000
公司只做原装正品
询价
ON/安森美
23+
TO-3P
50000
全新原装正品现货,支持订货
询价
ON/安森美
22+
TO-3P
6000
十年配单,只做原装
询价
MOT
8239
2
公司优势库存 热卖中!
询价
ON/安森美
TO-3P
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON/安森美
22+
TO-3P
50000
只做原装假一罚十,欢迎咨询
询价
ON/安森美
22+
TO-3P
25000
只做原装进口现货,专注配单
询价
isc
2024
TO-220
140
国产品牌isc,可替代原装
询价
更多MJE2801供应商 更新时间2024-5-5 16:00:00