MJ4502G

High-Power PNP Silicon Transistor

High-PowerPNPSiliconTransistor Thistransistorisforuseasanoutputdeviceincomplementaryaudioamplifiersto100−Wattsmusicpowerperchannel. Features •HighDCCurrentGain−hFE=25−100@IC=7.5A •ExcellentSafeOperatingArea •ComplementtotheNPNMJ802 •Pb−FreePackage

MJ4502G

Package：TO-204AA，TO-3；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 100V 30A TO204

MP4502

TOSHIBAPOWERTRANSISTORMODULESILICONNPNEPITAXIALTYPE

HighPowerSwitchingApplications HammerDrive,PulseMotorDriveandInductiveLoadSwitching •Packagewithheatsinkisolatedtolead(SIP12pins) •Highcollectorpowerdissipation(4-deviceoperation) :PT=5W(Ta=25°C) •Highcollectorcurrent:IC(DC)=3A(max) •HighDCcur

NTHD4502N

PowerMOSFET30V,3.9A,DualN?묬hannelChipFET

NTHD4502N

PowerMOSFET

NTL4502N

QuadPowerMOSFET24V,15A,N?묬hannel,PInPAK-TMPackage

NTR4502

P-Channel30-V(D-S)MOSFET

GeneralDescription TheUMWNTR4502PT1Gusesadvancedtrenchtechnology DRAINtoprovideexcellent RDS(on)withlowgatecharge.Thisdeviceissuitablefor useasaload switchorinPWMapplications.

NTR4502P

PowerMOSFET??0V,??.95A,Single,P?묬hannel,SOT??3

−30V,−1.95A,Single,P−Channel,SOT−23 Features •LeadingPlanarTechnologyforLowGateCharge/FastSwitching •LowRDS(ON)forLowConductionLosses •SOT−23SurfaceMountforSmallFootprint(3X3mm) •Pb−FreePackagesareAvailable Applications •DCtoDCConversi

NTR4502P

PowerMOSFET

NTR4502P

PowerMOSFET