MJ11029

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

MJ11029

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MJ11029

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

MJ11029

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

MJ11029

isc Silicon PNP Darlington Power Transistor

DESCRIPTION •Collector-EmitterBreakdownVoltage :V(BR)CEO=-60V(Min.) •HighDCCurrentGain- :hFE=1000(Min.)@IC=-25A :hFE=400(Min.)@IC=-50A •ComplementtoTypeMJ11028 APPLICATIONS •Designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplic

MJ11020

isc Silicon NPN Darlington Power Transistor

MJ11021

DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON

MJ11021

Complementary Darlington Silicon Power Transistors

MJ11021

Complementary Darlington Silicon Power Transistors

MJ11021

Trans Darlington PNP 250V 15A 3-Pin(2+Tab) TO-204 Tray;