MJ11020

POWER TRANSISTORS(15A,150-250V,175W)

15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN

MJ11020

NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)

SWITCHINGREGULATORSPWMINVERTERS SOLENOIDANDRELAYDRIVERS

MJ11020

175W PNP Darlington BJT Transistor;

This BJT is packaged in TO-3 package.\n\n Available as High Reliability device per MIL-PRF-19500 indicate –HR suffix after the part number. Contact for -HR flow. Add \"PBF\" suffix for Pb-free lead finish.\n\n

MJ11021

15 A，250 V，PNP 达林顿双极功率晶体管; • Pb-Free Packages are Available\n;

The Darlington Bipolar Power Transistor is designed for use as general purpose amplifiers, low frequency switching and motor control applications.The MJ11021(PNP) and MJ11022 (NPN) are complementary devices.

MJ11021

POWER TRANSISTORS(15A,150-250V,175W)

15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN

MJ11021

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

ComplementaryDarlingtonSiliconPowerTransistors ...designedforuseasgeneralpurposeamplifiers,lowfrequencyswitchingandmotorcontrolapplications. •HighdcCurrentGain@10Adc—hFE=400Min(AllTypes) •Collector–EmitterSustainingVoltage VCEO(sus

MJ11021

Complementary Darlington Silicon Power Transistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

MJ11021G

Complementary Darlington Silicon Power Transistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

MJ11021G

Silicon PNP Power Transistor

DESCRIPTION ·Collector-EmitterBreakdownVoltage -V(BR)CEO=-250V(Min) ·Collector-EmitterSaturationVoltage -VCE(sat):-3.4V(Max)@IC=-15A APPLICATIONS ·Lowcurrenthighspeedswitchingapplications ·Lowpoweraudioamplifier

MJ11022

POWER TRANSISTORS(15A,150-250V,175W)

15AMPERECOMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTOR150-250VOLTS175WATTS MJ11017,MJ11019,MJ11021=>PNP MJ11018,MJ11020,MJ11022=>NPN