MJ11022

30 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 60.120 VOLTS 200 WATTS

ComplementaryDarlingtonSiliconPowerTransistors ...designedforuseasgeneralpurposeamplifiers,lowfrequencyswitchingandmotorcontrolapplications. •HighdcCurrentGain@10Adc—hFE=400Min(AllTypes) •Collector–EmitterSustainingVoltage VCEO(sus

MJ11022

isc Silicon NPN Darlington Power Transistor

DESCRIPTION •Collector-EmitterSustainingVoltage- :VCEO(SUS)=250V(Min.) •HighDCCurrentGain- :hFE=400(Min.)@IC=10A •LowCollectorSaturationVoltage- :VCE(sat)=1.0V(Max.)@IC=5.0A APPLICATIONS •Designedforgeneralpurposeamplifiers,lowfrequency sw

MJ11022

Complementary Darlington Silicon Power Transistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

MJ11022G

Complementary Darlington Silicon Power Transistors

ComplementaryDarlingtonSiliconPowerTransistorsaredesigned foruseasgeneralpurposeamplifiers,lowfrequencyswitchingand motorcontrolapplications. Features •HighdcCurrentGain@10Adc−hFE=400Min(AllTypes) •Collector−EmitterSustainingVoltage VCEO(sus)=250Vdc(Min)

MJ11028

POWER TRANSISTOR(50A,60-120V,300W)

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS ...designedforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighGainDarlingtonPerformance •HighDCCurrentGain:hFE=1000(Min)@IC=25A hFE=400(Mi

MJ11028

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •

MJ11028

COMPLEMENTARY DARLINGTON POWER TRANSISTOR

FEATURES •HIGHDCCURRENTGAIN HFE=1000Min@IC=25A HFE=400Min0@IC=50A •CURVESTO100A(Pulsed) •DIODEPROTECTIONTORATEDIC •MONOLITHICCONSTRUCTIONWITHBUILT-INBASE–EMITTERSHUNTRESISTOR •JUNCTIONTEMPERATURETO+200°C APPLICATIONS Foruseasoutputde

MJ11028

COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS

High−CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain−hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A

MJ11028

High-Current Complementary Silicon Power Transistors

High-CurrentComplementarySiliconPowerTransistorsareforuseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. Features •HighDCCurrentGain-hFE=1000(Min)@Ic=25Adc hFE=400(Min)@Ic=50Adc •Curvesto100A(P

MJ11029

50 AMPERE COMPLEMENTARY SILICON DARLINGTON POWER TRANSISTORS 60.120 VOLTS 300 WATTS

High-CurrentComplementarySiliconTransistor ...foruseasoutputdevicesincomplementarygeneralpurposeamplifierapplications. •HighDCCurrentGain—hFE=1000(Min)@IC=25Adc hFE=400(Min)@IC=50Adc •Curvesto100A(Pulsed) •