MGF0904A

High-power GaAs FET (small signal gain stage) L & S BAND / 0.6W; • High output power\n   Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm\n• High power gain\n   Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm\n• High power added efficiency\n   P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBmAPPLICATION\n• For UHF Band power amplifiers ;

DESCRIPTION\nThe MGF0904A, GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers.FEATURES\n• High output power\n   Po=28.0dBm(TYP.) @f=1.65GHz,Pin=15dBm\n• High power gain\n   Gp=13.0dB(TYP.) @f=1.65GHz,Pin=15dBm\n• High power added efficiency\n   P.A.E =40%(TYP.) @f=1.65GHz,Pin=15dBmAPPLICATION\n• For UHF Band power amplifiers

MGF0904A

L,S BAND POWER GaAs FET;

MGF0904A

L,S BAND POWER GaAs FET

MGF0904A

L,S BAND POWER GaAs FET?

MGF0904A

L,S BAND POWER GaAs FET

MGF0904A

High-power GaAs FET (small signal gain stage)

MGF0904A_1

L,S BAND POWER GaAs FET

MGF0904A_11

High-power GaAs FET (small signal gain stage)