Fast Recovery Diode

KEY PARAMETERS VRRM 4500V IF(AV) 2130A IFSM 20000A Qr 2200µC trr 6.0µs FEATURES ■Double side cooling ■High surge capability ■Low recovery charge APPLICATIONS ■Freewheel Diode ■D.C. Motor Drives ■Welding ■High Freq

文件：70.5 Kbytes 页数：8 Pages

DYNEX

丝印：B2；Package：DFN1006；1-Line Bi-directional TVS Diode

Features Ultra small package: 1.0x0.6x0.5mm Ultra low capacitance: 15pF typical Ultra low leakage: nA level Low operating voltage: 5V Low clamping voltage 2-pin leadless package Complies with following standards: – IEC 61000-4-2 (ESD) immunity test Air discharge: ±30kV Contact discharge:

文件：1.81497 Mbytes 页数：4 Pages

LEIDITECH

雷卯电子

DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)150A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV）=150A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type ● Reverse Recovery Time（trr） L Ty

文件：99.23 Kbytes 页数：2 Pages

SANREX

三社

DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)150A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV）=150A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type ● Reverse Recovery Time（trr） L Ty

文件：99.23 Kbytes 页数：2 Pages

SANREX

三社

DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)250A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV） 250A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type MDF:anode to terminal （normal

文件：94.46 Kbytes 页数：2 Pages

SANREX

三社

DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)250A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV） 250A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type MDF:anode to terminal （normal

文件：94.46 Kbytes 页数：2 Pages

SANREX

三社

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.74 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.54 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.4 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.15 Kbytes 页数：2 Pages

ISC

无锡固电