DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)150A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV）=150A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type ● Reverse Recovery Time（trr） L Ty

文件：99.23 Kbytes 页数：2 Pages

SANREX

三社

DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)250A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV） 250A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type MDF:anode to terminal （normal

文件：94.46 Kbytes 页数：2 Pages

SANREX

三社

DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)250A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV） 250A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type MDF:anode to terminal （normal

文件：94.46 Kbytes 页数：2 Pages

SANREX

三社

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.74 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.54 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.4 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.15 Kbytes 页数：2 Pages

ISC

无锡固电

SURFACE MOUNT BRIDGE

文件：42.58 Kbytes 页数：2 Pages

MIC

昌福电子

SURFACE MOUNT BRIDGE

文件：42.58 Kbytes 页数：2 Pages

MIC

昌福电子

SURFACE MOUNT BRIDGE

文件：42.58 Kbytes 页数：2 Pages

MIC

昌福电子