isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

文件：1.13178 Mbytes 页数：6 Pages

MGCHIP

500V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 500V, 13.0A, 0.5(ohm)

General Description The MDP13N50 uses advanced Magnachip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. MDP13N50 is suitable device for SMPS, HID and general purpose applications. Features ■ VDS = 500V ■ ID = 13.0A @VGS = 10V ■ R

文件：851.29 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 500V, 13.0 A, 0.5(ohm)

文件：1.2155 Mbytes 页数：8 Pages

MGCHIP

N-Channel MOSFET 500V, 13.0 A, 0.5(ohm)

文件：1.2155 Mbytes 页数：8 Pages

MGCHIP