Metalized Polyester Film Capacitors MDF: General Purpose, Lead Space 7.5mm~42.5mm

文件：1.07291 Mbytes 页数：2 Pages

RFE

RFE international

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)100A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝100A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：90.76 Kbytes 页数：2 Pages

SANREX

三社

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)100A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝100A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：90.76 Kbytes 页数：2 Pages

SANREX

三社

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)100A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝100A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：90.76 Kbytes 页数：2 Pages

SANREX

三社

丝印：10N055；Package：TO-220F；Single N-channel Trench MOSFET 100V 5.5mΩ 80A

General description The MDF10N055TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Synchronous Rectification and gene

文件：602.66 Kbytes 页数：7 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.72 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 600V, 10A, 0.7(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

文件：1.43302 Mbytes 页数：8 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.58 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.54 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 650V, 12A, 0.65(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

文件：787.51 Kbytes 页数：6 Pages

MGCHIP