MDF

Metalized Polyester Film Capacitors MDF: General Purpose, Lead Space 7.5mm~42.5mm

MDF100A30

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATEDTYPE) MDF(R)100Aisadiodewithflatmountingbasewhichisdesignedforuseinvariousrectifierapplications. ●IF（AV）＝100A,VRRM＝500V ●EasyConstructionwithAnode（F）TypeandCathode（R）type. ●Highreliabilitybyglasspassivation （Applications） VariousRectifier

MDF100A40

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATEDTYPE) MDF(R)100Aisadiodewithflatmountingbasewhichisdesignedforuseinvariousrectifierapplications. ●IF（AV）＝100A,VRRM＝500V ●EasyConstructionwithAnode（F）TypeandCathode（R）type. ●Highreliabilitybyglasspassivation （Applications） VariousRectifier

MDF100A50

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATEDTYPE) MDF(R)100Aisadiodewithflatmountingbasewhichisdesignedforuseinvariousrectifierapplications. ●IF（AV）＝100A,VRRM＝500V ●EasyConstructionwithAnode（F）TypeandCathode（R）type. ●Highreliabilitybyglasspassivation （Applications） VariousRectifier

MDF10N055TH

Marking：10N055；Package：TO-220F；Single N-channel Trench MOSFET 100V 5.5mΩ 80A

Generaldescription TheMDF10N055THusesadvancedMagnachip’sMOSFET Technology,whichprovideshighperformanceinon-state resistance,fastswitchingperformance,andexcellentquality. Thesedevicescanalsobeutilizedinindustrialapplications suchasSynchronousRectificationandgene

MDF10N60BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.7Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF10N60GTH

N-Channel MOSFET 600V, 10A, 0.7(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat

MDF10N65BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=650V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF11N60TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D

MDF11N65B

N-Channel MOSFET 650V, 12A, 0.65(ohm)

GeneralDescription TheseN-channelMOSFETareproducedusingadvancedMagnaChip’sMOSFETTechnology,whichprovideslowonstateresistance,highswitchingperformanceandexcellentquality. ThesedevicesaresuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. Feat