N-Channel MOSFET 600V, 11A, 0.55Ω

General Description The MDF11N60 uses advanced Magnachip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF11N60 is suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 600V  VDS =

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MGCHIP

N-Channel MOSFET 600V, 11A, 0.55(ohm)

文件：959.32 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

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ISC

无锡固电

N-Channel MOSFET 600V, 11A, 0.55(ohm)

文件：959.32 Kbytes 页数：6 Pages

MGCHIP

600V HV MOSFETs

MagnaChip

美格纳

600V N-Ch MOSFET

MagnaChip

美格纳