MDF11N60TH中文资料下载原装现货无锡固电-114ic电子网

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型号	下载订购	功能描述	制造商上传企业	LOGO
MDF11N60TH	文件：322.54 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：322.54 Kbytes 页数：2 Pages	ISC 无锡固电	ISC
MDF11N60TH	文件：959.32 Kbytes Page：6 Pages	N-Channel MOSFET 600V, 11A, 0.55(ohm) 文件：959.32 Kbytes 页数：6 Pages	MGCHIP	MGCHIP
MDF11N60TH	文件：300 bytes Page：1 Pages	600V N-Ch MOSFET	MagnaChip 美格纳	MagnaChip
MDFS11N60	文件：1.03851 Mbytes Page：6 Pages	N-Channel MOSFET 600V, 11A, 0.55(ohm) 文件：1.03851 Mbytes 页数：6 Pages	MGCHIP	MGCHIP
MDFS11N60TH	文件：1.03851 Mbytes Page：6 Pages	N-Channel MOSFET 600V, 11A, 0.55(ohm) 文件：1.03851 Mbytes 页数：6 Pages	MGCHIP	MGCHIP
MDFS11N60TH	文件：322.54 Kbytes Page：2 Pages	isc N-Channel MOSFET Transistor FEATURES ·Drain Current : ID= 11A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.55Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D 文件：322.54 Kbytes 页数：2 Pages	ISC 无锡固电	ISC

更多MDF11N60TH供应商更新时间2025-12-24 9:20:00