isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 11.5A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC

文件：322.07 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 11.5A, 0.65(ohm)

文件：1.15511 Mbytes 页数：8 Pages

MGCHIP

500V N-Ch MOSFET

MagnaChip

美格纳

N-Channel MOSFET 500V, 11.5A, 0.75ohm

文件：1.38988 Mbytes 页数：8 Pages

MGCHIP

N-Channel MOSFET 500V, 11.5A, 0.75ohm

文件：1.38988 Mbytes 页数：8 Pages

MGCHIP

N-Channel MOSFET 500V, 11.5 A, 0.65(ohm)

文件：779.15 Kbytes 页数：8 Pages

MGCHIP