isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 14A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.46Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.31 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 650V, 14A, 0.46(ohm)

文件：835.88 Kbytes 页数：6 Pages

MGCHIP

650V N-Ch MOSFET

MagnaChip

美格纳

N-channel Enhanced mode TO-220FMOSFET

Features  High ruggedness  Low RDS(ON)(Typ 0.6Ω)@VGS=10V  Low Gate Charge (Typ54nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED, Charger, PC Power

文件：824.73 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220FMOSFET

Features  High ruggedness  Low RDS(ON)(Typ 0.6Ω)@VGS=10V  Low Gate Charge (Typ54nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED, Charger, PC Power

文件：824.73 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技