N-channel Enhanced mode TO-220FMOSFET

Features  High ruggedness  Low RDS(ON)(Typ 0.6Ω)@VGS=10V  Low Gate Charge (Typ54nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED, Charger, PC Power

文件：824.73 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

丝印：SW13N65D；Package：TO-220F；N-channel Enhanced mode TO-220FMOSFET

Features  High ruggedness  Low RDS(ON)(Typ 0.6Ω)@VGS=10V  Low Gate Charge (Typ54nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED, Charger, PC Power

文件：824.73 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

N-channel Enhanced mode TO-220FMOSFET

Features  High ruggedness  Low RDS(ON)(Typ 0.6Ω)@VGS=10V  Low Gate Charge (Typ54nC)  Improved dv/dt Capability  100 Avalanche Tested  Application: LED, Charger, PC Power

文件：824.73 Kbytes 页数：6 Pages

SEMIPOWER

芯派科技

13A 650V N-channel enhancement mode field effect transistor

文件：685.58 Kbytes 页数：5 Pages

YFWDIODE

佑风微

N-Channel MOSFET 650V, 14A, 0.46(ohm)

文件：835.88 Kbytes 页数：6 Pages

MGCHIP

N-Channel Enhancement Mode Field Effect Transistor

FEATURES Super high dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

文件：717.4 Kbytes 页数：5 Pages

CET-MOS

华瑞