N-Channel MOSFET 650V, 12A, 0.65(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

文件：787.51 Kbytes 页数：6 Pages

MGCHIP

N-Channel 650V (D-S) Power MOSFET

文件：1.07166 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 12A@ TC=25℃ ·Drain Source Voltage : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.65Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.39 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 650V, 12A, 0.65(ohm)

General Description These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low on state resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Feat

文件：787.51 Kbytes 页数：6 Pages

MGCHIP

650V N-Ch MOSFET

MagnaChip

美格纳