DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)150A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV）=150A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type ● Reverse Recovery Time（trr） L Ty

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DIODE MODULE竊뉶.R.D.竊

DIODE MODULE（F.R.D.） MDF(R)150A-L/M and MDR150-L/M are high speed（fast recovery） diode with flat mounting base which is designed for switching application of high power. ● IF（AV）=150A VRRM=200/300/400V ● Easy Construction with Anode（F） Type and Cathode（R） Type ● Reverse Recovery Time（trr） L Ty

文件：99.23 Kbytes 页数：2 Pages

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 15A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.4Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.25 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 16A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-D

文件：322.63 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 85A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.6mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.52 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 50A@ TC=25℃ ·Drain Source Voltage : VDSS= 40V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 8mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：322.49 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 43A@ TC=25℃ ·Drain Source Voltage : VDSS= 80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 7.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.78 Kbytes 页数：2 Pages

ISC

无锡固电

DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)200A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝200A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

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DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)200A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝200A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：91.51 Kbytes 页数：2 Pages

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DIODE(NON-ISOLATED TYPE)

DIODE(NON-ISOLATED TYPE) MDF(R)200A is a diode with flat mounting base which is designed for use in various rectifier applications. ● IF（AV）＝200A, VRRM＝500V ● Easy Construction with Anode（F） Type and Cathode（R） type. ● High reliability by glass passivation （Applications） Various Rectifier

文件：91.51 Kbytes 页数：2 Pages

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