丝印：10N055；Package：TO-220F；Single N-channel Trench MOSFET 100V 5.5mΩ 80A

General description The MDF10N055TH uses advanced Magnachip’s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance, and excellent quality. These devices can also be utilized in industrial applications such as Synchronous Rectification and gene

文件：602.66 Kbytes 页数：7 Pages

MGCHIP

MV MOSFETs

MagnaChip

美格纳

isc N-Channel MOSFET Transistor

文件：319.99 Kbytes 页数：2 Pages

ISC

无锡固电

Single N-channel Trench MOSFET 100V, 120A, 5.5m(ohm)

文件：1.07661 Mbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 130A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

文件：331.44 Kbytes 页数：2 Pages

ISC

无锡固电