MDF7P-8P-2.54DSA

2.54mm Pitch Bottom Entry Type Connector

■Features 1.BoardtoBoardSizeFreelySettable Theboardtoboardsizecanbesetatinfinitestages,accordingtotheheaderpinthroughtypestructureandthediverseheadervariation.Theboardtoboardsizecanbesetatinfinitestages. 2.IntegrityofPartsMountedSurface The

MDF7P-9P-2.54DSA

2.54mm Pitch Bottom Entry Type Connector

■Features 1.BoardtoBoardSizeFreelySettable Theboardtoboardsizecanbesetatinfinitestages,accordingtotheheaderpinthroughtypestructureandthediverseheadervariation.Theboardtoboardsizecanbesetatinfinitestages. 2.IntegrityofPartsMountedSurface The

MDF8N60BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.05Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF8N60TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=1.0Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF9N50

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MDF9N50TH

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MDF9N50TH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF9N60

N-Channel MOSFET 600V, 9A, 0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.

MDF9N60BTH

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

MDF9N60TH

N-Channel MOSFET 600V, 9A, 0.75(ohm)

TheMDF9N60usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality.MDF9N60issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications.