2.54mm Pitch Bottom Entry Type Connector

■ Features 1. Board to Board Size Freely Settable The board to board size can be set at infinite stages, according to the header pin through type structure and the diverse header variation. The board to board size can be set at infinite stages. 2. Integrity of Parts Mounted Surface The

文件：284.19 Kbytes 页数：7 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

2.54mm Pitch Bottom Entry Type Connector

■ Features 1. Board to Board Size Freely Settable The board to board size can be set at infinite stages, according to the header pin through type structure and the diverse header variation. The board to board size can be set at infinite stages. 2. Integrity of Parts Mounted Surface The

文件：284.19 Kbytes 页数：7 Pages

HIROSEHirose Electric Company

广濑日本广濑电机株式会社

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.05Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.96 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 8A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 1.0Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.94 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance,high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：771.41 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance,high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：771.41 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 600V, 9A, 0.75(ohm)

The MDF9N60 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and excellent quality. MDF9N60 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：739.29 Kbytes 页数：6 Pages

MGCHIP

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.8Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：323.12 Kbytes 页数：2 Pages

ISC

无锡固电

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.75Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：323.26 Kbytes 页数：2 Pages

ISC

无锡固电