N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance,high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：771.41 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 500V, 9.0 A, 0.85Ω

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance,high switching performance and excellent quality.\n\nMDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.

MagnaChip

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 9A@ TC=25℃ ·Drain Source Voltage : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

文件：322.91 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

The MDF9N50 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance,high switching performance and excellent quality. MDF9N50 is suitable device for SMPS, high Speed switching and general purpose applications.

文件：771.41 Kbytes 页数：6 Pages

MGCHIP

N-Channel MOSFET 500V, 9.0 A, 0.85(ohm)

文件：1.15572 Mbytes 页数：8 Pages

MGCHIP

isc N-Channel MOSFET Transistor

文件：296.39 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel MOSFET 500V, 8.0 A, 0.97ohm

文件：945.71 Kbytes 页数：6 Pages

MGCHIP

500V N-Ch MOSFET

MagnaChip

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500V N-Ch MOSFET

MagnaChip

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