首页 >MDF9N50FTH>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET500V,9.0A,0.85(ohm) TheMDF9N50usesadvancedMagnaChip’sMOSFETTechnology,whichprovideslowon-stateresistance,highswitchingperformanceandexcellentquality. MDF9N50issuitabledeviceforSMPS,highSpeedswitchingandgeneralpurposeapplications. | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET500V,9.0A,0.85(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET500V,9.0A,0.85(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelMOSFET500V,9.0A,0.85(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET500V,8.0A,0.97ohm | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.85Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFET500V,9.0A,0.85(ohm) | MGCHIP MagnaChip Semiconductor. | MGCHIP | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC |
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