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MBD110DWT1

Dual Schottky Barrier Diodes

Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package. The SOT−3

文件:69.62 Kbytes 页数:8 Pages

ONSEMI

安森美半导体

MBD110DWT1

Dual SCHOTTKY Barrier Diodes

Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six–leaded package. The SOT–3

文件:244.47 Kbytes 页数:5 Pages

LRC

乐山无线电

MBD110DWT1

Dual Schottky Barrier Diodes

Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT–363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small

文件:180.91 Kbytes 页数:8 Pages

Motorola

摩托罗拉

MBD110DWT1

Dual Schottky Barrier Diodes

Features ● Extremely Low Minority Carrier Lifetime ● Very Low Capacitance ● Low Reverse Leakage

文件:38.93 Kbytes 页数:2 Pages

KEXIN

科信电子

MBD110DWT1

Dual SCHOTTKY Barrier Diodes

文件:414.6 Kbytes 页数:4 Pages

ETL

亚历电子

MBD110DWT1

Dual SCHOTTKY Barrier Diodes

文件:546.71 Kbytes 页数:5 Pages

ETL

亚历电子

MBD110DWT1

Dual Schottky Barrier Diodes

文件:64.3 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

MBD110DWT1

Dual Schottky Barrier Diodes

ONSEMI

安森美半导体

MBD110DWT1G

丝印:M4;Package:SC-88;Dual Schottky Barrier Diodes

Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT−363 package is a solution which simplifies circuit design, reduces device count, and reduces board space by putting two discrete devices in one small six−leaded package. The S

文件:213.8 Kbytes 页数:7 Pages

ONSEMI

安森美半导体

MBD110DWT1_07

Dual Schottky Barrier Diodes

文件:64.3 Kbytes 页数:6 Pages

ONSEMI

安森美半导体

详细参数

  • 型号:

    MBD110DWT1

  • 功能描述:

    肖特基二极管与整流器 7V 120mW Dual

  • RoHS:

  • 制造商:

    Skyworks Solutions, Inc.

  • 产品:

    Schottky Diodes

  • 峰值反向电压:

    2 V

  • 正向连续电流:

    50 mA

  • 配置:

    Crossover Quad

  • 正向电压下降:

    370 mV

  • 最大功率耗散:

    75 mW

  • 工作温度范围:

    - 65 C to + 150 C

  • 安装风格:

    SMD/SMT

  • 封装/箱体:

    SOT-143

  • 封装:

    Reel

供应商型号品牌批号封装库存备注价格
ONSemiconductor
24+
SOT363
4460
询价
ONSEMICONDUC
06+
原厂原装
13216
只做全新原装真实现货供应
询价
ONSemiconductor
2000
SOT363
4460
原装现货海量库存欢迎咨询
询价
ONSemiconductor
23+
SOT363
3000
全新原装假一赔十
询价
ONSemiconduc
25+
QFP
3200
全新原装、诚信经营、公司现货销售!
询价
ONN
23+
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
ON Semiconductor
23+
3880
正品原装货价格低
询价
2023+
4460
进口原装现货
询价
2023+
5800
进口原装,现货热卖
询价
FUJITSU
24+
QFP
37500
原装正品现货,价格有优势!
询价
更多MBD110DWT1供应商 更新时间2025-10-8 15:30:00