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SP8510KS

12-BitSamplingA/DConverters

DESCRIPTION… TheSP85XXSeriesarecomplete12-bitsamplingA/Dconvertersusingstate–of–the–artCMOSstructures.Theycontainacomplete12–bitsuccessiveapproximationA/Dconverterwithinternalsample/hold,reference,clock,digitalinterfaceformicroprocessorcontrol,andthree–stateoutpu

SipexSipex Corporation

西伯斯西伯斯公司

TCP8510

MouldedTypeStraightPlugs

HOSIDEN

Hosiden Corporation

TDA8510

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TDA8510J

26WBTLand2x13WSEpoweramplifiers

PhilipsPhilips Semiconductors

飞利浦荷兰皇家飞利浦

TPCP8510

TransistorSiliconNPNEpitaxialType

High-Speed,High-VoltageSwitchingApplications DC-DCConverterApplications •HighDCcurrentgain:hFE=120to300(IC=0.1A) •Lowcollector-emittersaturation:VCE(sat)=0.14V(max) •High-speedswitching:tf=0.2μs(typ)

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TPCP8510

BipolarSmall-SignalTransistors

MOSGT30F12630F12630A/330VIGBTTO-220F Toshiba30F126GT30F126 Referencesite:http://monitor.net.ru/forum/30f126-info-494727.html ReferencePDF(30F124,30F125,30F127,30F128,30F131) :http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

TOSHIBAToshiba Semiconductor

东芝株式会社东芝

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

VishayVishay Siliconix

威世科技威世科技半导体

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半导体

TS8510VB

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”.  GENERALINFORMATION ThedatasheetisbasedonVishayoptoelectronicssampletestingundercertainpredeterminedanda

VishayVishay Siliconix

威世科技威世科技半导体

TS8510VB-SD-F

SpecificationofHighPowerIREmittingDiodeChip

DESCRIPTION TS8510VBisahighpowerinfrared,855nmsurfaceemitting diodeinGaAlAstechnologywithhighradiantpowerand highspeed.Polarityconfigurationis“n-up”. FEATURES •Packagetype:chip •Packageform:singlechip •Technology:surfaceemitter •Dimensionschip(LxWxH

VishayVishay Siliconix

威世科技威世科技半导体

供应商型号品牌批号封装库存备注价格
MAXIM
23+
NA
25060
只做进口原装,终端工厂免费送样
询价
maxim
20+
20000
全新现货热卖中欢迎查询
询价
-
23+
SC70-5
50000
全新原装正品现货,支持订货
询价
MAXIM
19+
SOT353
256800
原厂代理渠道,每一颗芯片都可追溯原厂;
询价
MAXIM/美信
23+
SOT353
50000
全新原装正品现货,支持订货
询价
MAXIM
24+
SOT353
2600
原装现货假一赔十
询价
MAXIM/美信
24+
NA/
3450
原装现货,当天可交货,原型号开票
询价
MAXIM/美信
2450+
SOT353
6540
只做原装正品现货或订货!终端客户免费申请样品!
询价
MAX
22+
SC70-5
8200
原装现货库存.价格优势!!
询价
MAX
24+
SMD
20000
一级代理原装现货假一罚十
询价
更多MAX8510EXKXY-T供应商 更新时间2025-7-12 9:03:00