MAX8510EXKXY-T

Ultra-Low-Noise, High PSRR, Low-Dropout,120mA Linear Regulators in SC70

GeneralDescription TheMAX8510/MAX8511/MAX8512ultra-low-noise,lowdropout(LDO)linearregulatorsaredesignedtodeliverupto120mAcontinuousoutputcurrent.Theseregulatorsachievealow120mVdropoutfor120mAloadcurrent.TheMAX8510usesanadvancedarchitecturetoachieveultra-lowo

MR8510

3AFASTRECOVERYPLASTICRECTIFIER

FEATURES ●HIGHSURGECURRENTCAPABILITY ●PLASTICMATERIALCARRIESU/LRECOGNITION94-0 ●HIGHCURRENTOPERATION3AMPERESATTA=55°C ●FASTSWITCHINGFORHIGHEFFICIENCY ●HIGHTEMPERATURESOLDERINGGUARANTEED:250°C/10S/0.375”(9.5mm)LEADLENGTH/5LBS.,(2.3KG)TENSION

NX8510UD

LASERDIODE

1470TO1610nmFORCWDM2.5Gb/s InGaAsPMQW-DFBLASERDIODETOSA DESCRIPTION TheNX8510UDisa1470to1610nmMultipleQuantumWell(MQW) structuredDistributedFeed-Back(DFB)laserdiodeTOSA(transmitteroptical sub-assembly)withInGaAsmonitorPIN-PDinareceptacletypepackage

NX8510UD

NECsInGaAsPMQW-DFBTOSAFOR2.5Gb/sCWDMAPPLICATIONS

NX8510UD-AZ

NECsInGaAsPMQW-DFBTOSAFOR2.5Gb/sCWDMAPPLICATIONS

NX8510UDSeries

1550nmFORLONGHAUL2.5Gb/sInGaAsPMQW-DFBLASERDIODETOSA

OPA8510CDD

InfraredLEDChip

OPA8510HPR

InfraredLEDChip

PBSS8510PA

100V,5.2ANPNlowVCEsat(BISS)transistor

Generaldescription NPNlowVCEsatBreakthroughInSmallSignal(BISS)transistor,encapsulatedinanultrathinSOT1061leadlesssmallSurface-MountedDevice(SMD)plasticpackagewithmediumpowercapability. PNPcomplement:PBSS9410PA. Featuresandbenefits ■Lowcollector-emittersaturatio

PM-8510

10/100Base-TXISOLATIONTRANSFORMERSWITHFILTERS