TDA8510J

Overview

恩XP

26 W BTL and 2 x 13 W SE power amplifiers

文件：82.88 Kbytes 页数：16 Pages

PHI

飞利浦

Transistor Silicon NPN Epitaxial Type

High-Speed, High-Voltage Switching Applications DC-DC Converter Applications • High DC current gain: hFE = 120 to 300 (IC = 0.1 A) • Low collector-emitter saturation: VCE (sat) = 0.14 V (max) • High-speed switching: tf = 0.2 μs (typ)

文件：218.37 Kbytes 页数：5 Pages

TOSHIBA

东芝

Bipolar Small-Signal Transistors

MOS GT30F126 30F126 30A/330V IGBT TO-220F Toshiba 30F126 GT30F126 Reference site : http://monitor.net.ru/forum/30f126-info-494727.html Reference PDF (30F124, 30F125, 30F127, 30F128, 30F131) : http://pdf.datasheetbank.com/pdf/Toshiba/190505.pdf

文件：1.58274 Mbytes 页数：73 Pages

TOSHIBA

东芝

Specification of High Power IR Emitting Diode Chip

文件：87.85 Kbytes 页数：4 Pages

VishayVishay Siliconix

威世威世科技公司