QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

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QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：234.28 Kbytes 页数：9 Pages

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丝印：74HC08；Package：SO14；Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

文件：354.79 Kbytes 页数：15 Pages

STMICROELECTRONICS

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QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：171.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：171.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：HC08；Package：TSSOP14；Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

文件：354.79 Kbytes 页数：15 Pages

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丝印：74HC08Y；Package：SO14(automotivegrade)；Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

文件：354.79 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

丝印：HC08Y；Package：TSSOP14(automotivegrade)；Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

文件：354.79 Kbytes 页数：15 Pages

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QUAD 2-INPUT AND GATE OPEN DRAIN

DESCRIPTION The M54/74HC09 is a high speed CMOS QUAD 2-INPUT OPEN DRAIN AND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

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QUAD 2-INPUT AND GATE OPEN DRAIN

Description The M74HC09 is an high speed CMOS Quad 2-input open drain and gate fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection

文件：170.64 Kbytes 页数：8 Pages

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