HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

文件：227.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

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HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

文件：227.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

HEX BUFFER OPEN DRAIN

DESCRIPTION The M74HC07 is an high speed CMOS HEX OPEN DRAIN BUFFER fabricated with silicon gate C2MOS technology. The internal circuit is composed of 2 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits ag

文件：227.4 Kbytes 页数：10 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：171.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：234.28 Kbytes 页数：9 Pages

STMICROELECTRONICS

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Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

文件：354.79 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Quad dual-input and gate

Features • High speed: tPD = 7 ns (typ.) at VCC = 6 V • Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C • High noise immunity: VNIH = VNIL = 28 % VCC (min.) • Symmetrical output impedance: |IOH| = IOL = 4 mA (min) • Balanced propagation delays: tPLH ~= tPHL • Wide operating voltag

文件：354.79 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：171.14 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：234.28 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT AND GATE

DESCRIPTION The M54/74HC08 is a high speed CMOS QUAD 2-INPUTAND GATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOSlowpower consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC =

文件：234.28 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体