QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：232.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

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QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：179.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：232.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：179.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：232.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：179.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：232.68 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：179.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

QUAD 2-INPUT OPEN DRAIN NAND GATE

DESCRIPTION The M54/74HC03 is a high speed CMOS QUAD 2-INPUTOPEN DRAIN NANDGATE fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which

文件：179.52 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M74HC04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：167.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体