HEX INVERTER

DESCRIPTION The M54/74HC04 is a high speed CMOS HEX INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA

文件：232.33 Kbytes 页数：9 Pages

STMICROELECTRONICS

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HEX INVERTER

DESCRIPTION The M74HC04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：167.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

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Hex Inverter

The M74HC04 is a high-speed CMOS hex inverter manufactured using silicon gate C2MOS technology.\nThe internal circuit is composed of 3 stages including a buffer output which enables high noise immunity and stable output.\nAll inputs are equipped with protection circuits to guard against static disch High speed: t\nPD= 8 ns (typ.) at V\nCC= 6 V\nLow power dissipation: I\nCC= 1 μA (max.) at T\nA = 25 °C\nHigh noise immunity: V\nNIH= V\nNIL= 28% V\nCC(min.)\nSymmetrical output impedance: |I\nOH| = I\nOL= 4 mA (min) at V\nCC= 4.5 V\nBalanced propagation delays: t\nPLH@ t\nPHL\nWide operating vo;

ST

意法半导体

HEX INVERTER

DESCRIPTION The M54/74HC04 is a high speed CMOS HEX INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA

文件：232.33 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M74HC04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：167.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M54/74HC04 is a high speed CMOS HEX INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA

文件：232.33 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M74HC04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：167.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M54/74HC04 is a high speed CMOS HEX INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. ■ HIGH SPEED tPD = 6 ns (TYP.) AT VCC = 5 V ■ LOW POWER DISSIPATION ICC = 1 µA

文件：232.33 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M74HC04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：167.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M74HC04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：167.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体