丝印：74HC04；Package：SO14；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER

DESCRIPTION The M74HC04 is an high speed CMOS HEX INVERTER fabricated with silicon gate C2MOS technology. ■ HIGH SPEED: tPD = 8ns (TYP.) at VCC = 6V ■ LOW POWER DISSIPATION: ICC = 1µA(MAX.) at TA=25°C ■ HIGH NOISE IMMUNITY: VNIH = VNIL = 28 VCC (MIN.) ■ SYMMETRICAL OUTPUT

文件：167.86 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

丝印：HC04；Package：TSSOP14；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：74HC04Y；Package：SO14(automotivegrade)；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

丝印：HC04Y；Package：TSSOP14(automotivegrade)；Hex inverter

Features  High speed: tPD = 8 ns (typ.) at VCC = 6 V  Low power dissipation: ICC = 1 μA (max.) at TA = 25 °C  High noise immunity: VNIH = VNIL = 28% VCC (min.)  Symmetrical output impedance: |IOH| = IOL = 4 mA (min) at VCC = 4.5 V  Balanced propagation delays: tPLH @ tPHL  Wid

文件：438.84 Kbytes 页数：13 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER OPEN DRAIN

DESCRIPTION The M74HC05 is an high speed CMOS HEX INVERTER (OPEN DRAIN) fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits a

文件：168.03 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER OPEN DRAIN

DESCRIPTION The M54/74HC05 is a high speed CMOS HEX OPEN DRAIN INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which enables

文件：227.59 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER OPEN DRAIN

DESCRIPTION The M54/74HC05 is a high speed CMOS HEX OPEN DRAIN INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which enables

文件：227.59 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER OPEN DRAIN

DESCRIPTION The M74HC05 is an high speed CMOS HEX INVERTER (OPEN DRAIN) fabricated with silicon gate C2MOS technology. The internal circuit is composed of 3 stages including buffer output, which enables high noise immunity and stable output. All inputs are equipped with protection circuits a

文件：168.03 Kbytes 页数：8 Pages

STMICROELECTRONICS

意法半导体

HEX INVERTER OPEN DRAIN

DESCRIPTION The M54/74HC05 is a high speed CMOS HEX OPEN DRAIN INVERTER fabricated in silicon gate C2MOS technology. It has the same high speed performance of LSTTL combined with true CMOS low power consumption. The internal circuit is composed of 3 stages including buffer output, which enables

文件：227.59 Kbytes 页数：9 Pages

STMICROELECTRONICS

意法半导体