262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM???

文件：451.9 Kbytes 页数：7 Pages

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三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：44.92 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：46.66 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：44.92 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：46.66 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：44.92 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：46.66 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：44.92 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：46.66 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机

262144-BIT (32768-WORD BY 8-BIT) CMOS STATIC RAM

DESCRIPTION The M5M5256DP,KP,FP,VP,RV is 262,144-bit CMOS static RAMs organized as 32,768-words by 8-bits which is fabricated using high-performance 3 polysilicon CMOS technology. The use of resistive load NMOS cells and CMOS periphery results in a high density and low power static RAM. Stand-by

文件：44.92 Kbytes 页数：7 Pages

MITSUBISHI

三菱电机